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Surface composition and fabrication of an oxide‐free Ga1−xAlxAs Schottky barrier

 

作者: Bansang W. Lee,   Peter Mark,   Jwu‐Lin Yeh,  

 

期刊: Applied Physics Letters  （AIP Available online 1978）
卷期: Volume 32, issue 11  

页码: 751-753

 

ISSN:0003-6951

 

年代: 1978

 

DOI:10.1063/1.89917

 

出版商: AIP

 

数据来源: AIP

 

摘要:

A native oxide layer of ∼30 A˚ is found on the Ga1−xAlxAs surface. Ion‐sputtering and ultrahigh vacuum (UHV) technologies are developed to fabricate an oxide‐free Schottky barrier from the (100) face of the compound semiconductor.

 

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