The electrical characteristics of amorphous Fe‐W contacts have been determined on bothp‐type andn‐type silicon. The amorphous films were obtained by cosputtering from a composite target. Contact resistivities, &rgr;c=1×10−7and &rgr;c=2.8×10−6, were measured onn+andp+silicon, respectively. These values remain constant after thermal treatment up to at least 500 °C. A barrier height, &fgr;Bn=0.61 V, was measured onn‐type silicon.