Room‐temperature laser diodes which emit coherent infrared radiation near 1.1 &mgr;m have been prepared from InxGa1−xAs (x[inverted lazy s]0.23) vapor‐grownp‐njunction structures. At 77°K, laser threshold current densities as low as 1210 A/cm2and external differential quantum efficiencies as high as 50% have been obtained at 1.08 &mgr;m. At 300°K, the threshold current densities are between 70 000 and 98 000 A/cm2for emission at 1.145 &mgr;m.