首页   按字顺浏览 期刊浏览 卷期浏览 Measurement of carrier and lattice heating in 1.3‐&mgr;m InGaAsP light‐em...
Measurement of carrier and lattice heating in 1.3‐&mgr;m InGaAsP light‐emitting diodes

 

作者: J. Manning,   R. Olshansky,   C. B. Su,   W. Powazinik,  

 

期刊: Applied Physics Letters  （AIP Available online 1983）
卷期: Volume 43, issue 2  

页码: 134-135

 

ISSN:0003-6951

 

年代: 1983

 

DOI:10.1063/1.94281

 

出版商: AIP

 

数据来源: AIP

 

摘要:

The hot‐carrier effects reported for InGaAsP light‐emitting diodes are shown to result primarily from lattice heating. The small amount of heating observed at currents corresponding to typical threshold current density has negligible effect on the characteristic temperatureT0measured for InGaAsP lasers under pulsed conditions.

 

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