Analysis of optical writing mode in solid-state imaging devices with inherent MNOS memory
作者:
T.Ando,
H.Yamasaki,
T.Sugishita,
期刊:
IEE Proceedings I (Solid-State and Electron Devices)
(IET Available online 1986)
卷期:
Volume 133,
issue 1
页码: 6-12
年代: 1986
DOI:10.1049/ip-i-1.1986.0002
出版商: IEE
数据来源: IET
摘要:
A model for optical writing in solid-state imaging devices with an inherent MNOS memory is presented. It is shown that writing under low light levels is highly enhanced by the use of a proper bias-charge (fat-zero). The optimum operating condition under which wide dynamic range can be realised without degradation of the writing is also derived. Experimental results from test elements support these theoretical predictions. Finally, erase characteristics of the MNOS analog memory are presented.
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