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Analysis of optical writing mode in solid-state imaging devices with inherent MNOS memory

 

作者: T.Ando,   H.Yamasaki,   T.Sugishita,  

 

期刊: IEE Proceedings I (Solid-State and Electron Devices)  (IET Available online 1986)
卷期: Volume 133, issue 1  

页码: 6-12

 

年代: 1986

 

DOI:10.1049/ip-i-1.1986.0002

 

出版商: IEE

 

数据来源: IET

 

摘要:

A model for optical writing in solid-state imaging devices with an inherent MNOS memory is presented. It is shown that writing under low light levels is highly enhanced by the use of a proper bias-charge (fat-zero). The optimum operating condition under which wide dynamic range can be realised without degradation of the writing is also derived. Experimental results from test elements support these theoretical predictions. Finally, erase characteristics of the MNOS analog memory are presented.

 

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