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Effect of surface condition on diffusion in thin films at low temperatures

 

作者: J. C. M. Hwang,   P. S. Ho,   R. W. Balluffi,  

 

期刊: Applied Physics Letters  (AIP Available online 1978)
卷期: Volume 33, issue 5  

页码: 458-461

 

ISSN:0003-6951

 

年代: 1978

 

DOI:10.1063/1.90378

 

出版商: AIP

 

数据来源: AIP

 

摘要:

The effect of surface condition on the out‐diffusion of atoms through a thin film to the free surface has been analyzed by considering the coupling between grain boundary diffusion and surface diffusion. It is demonstrated that under certain circumstances, the surface diffusion rate can have a large effect on the measured rate of diffusion through the thin film. In the analysis for the cases involving out‐diffusion, the surface is treated as a sink of finite capacity and the saturation level of material accumulation at the surface is discussed in terms of a surface‐segregation ratio. This analysis can qualitatively explain some of the recent experimental observations on the effect of the annealing ambient on out‐diffusion. The opposite but similar problem of the effect of the source surface condition on the rate of in‐diffusion from the surface has also been discussed.

 

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