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Energy Spectra Of Dislocations In Silicon And Germanium

 

作者: Wolfgang Schröter,   Ernst Scheibe,   Helmut Schoen,  

 

期刊: Journal of Microscopy  （WILEY Available online 1980）
卷期: Volume 118, issue 1  

页码: 23-34

 

ISSN:0022-2720

 

年代: 1980

 

DOI:10.1111/j.1365-2818.1980.tb00242.x

 

出版商: Blackwell Publishing Ltd

 

数据来源: WILEY

 

摘要:

SUMMARYThe properties of edge‐type dislocations are strongly dependent on the temperature at which they have been introduced into the crystal. Dislocations produced atT0·6Tminto germanium, can be interpreted in terms of a half‐filled one‐dimensional band (forT≥ 50 K), which might be due to dangling bonds in the dislocation core. In silicon the experimental data indicate a similar form of the local energy spec

 

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