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CONDUCTIVITY AND HALL MOBILITY OF ION‐IMPLANTED SILICON IN SEMI‐INSULATING GALLIUM ARSENIDE

 

作者: James D. Sansbury,   James F. Gibbons,  

 

期刊: Applied Physics Letters  （AIP Available online 1969）
卷期: Volume 14, issue 10  

页码: 311-313

 

ISSN:0003-6951

 

年代: 1969

 

DOI:10.1063/1.1652663

 

出版商: AIP

 

数据来源: AIP

 

摘要:

Chromium‐doped semi‐insulating gallium arsenide has been successfully dopedn‐type by ion implantation of silicon. Annealing studies are presented which show that at annealing temperatures in excess of 600°C, conductivity and Hall mobility rise to values comparable to those expected for heavily doped gallium arsenide.

 

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