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Noise properties of the resonant tunneling structure

 

作者: D. V. Averin,  

 

期刊: AIP Conference Proceedings  (AIP Available online 1992)
卷期: Volume 262, issue 1  

页码: 267-274

 

ISSN:0094-243X

 

年代: 1992

 

DOI:10.1063/1.42659

 

出版商: AIP

 

数据来源: AIP

 

摘要:

Spectral density of the current fluctuations is calculated for the resonant tunneling structure: localized energy level between two bulk electrodes. This structure is molecular‐level counterpart of the system of two small metallic tunnel junctions connected in series (SET transistor). The current fluctuations determine the sensitivity of the structure to variations of the energy of the localized level.

 

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