Melt dynamics of silicon‐on‐sapphire during pulsed laser annealing
作者:
Michael O. Thompson,
G. J. Galvin,
J. W. Mayer,
P. S. Peercy,
R. B. Hammond,
期刊:
Applied Physics Letters
(AIP Available online 1983)
卷期:
Volume 42,
issue 5
页码: 445-447
ISSN:0003-6951
年代: 1983
DOI:10.1063/1.93965
出版商: AIP
数据来源: AIP
摘要:
Transient electrical conductance measurements have been made on 0.45‐&mgr;m silicon‐on‐sapphire during pulsed laser annealing with 25‐ns ruby irradiation. The photoconductive contribution to the transient current was sufficiently small that the entire melt and resolidification process could be directly observed. The technique yields quantitative measures of melt depths, melting velocities (5–13 m/s), and solidification velocities (2.8–3.3 m/s). Combined with the complementary techniques of time‐resolved reflectivity, energy transmission, and calorimetric energy absorption, transient conductance provides a powerful new diagnostic for investigating melt dynamics.
点击下载:
PDF
(222KB)
返 回