Optical and electrical properties of amorphous silicon films prepared by photochemical vapor deposition
作者:
T. Saitoh,
S. Muramatsu,
T. Shimada,
M. Migitaka,
期刊:
Applied Physics Letters
(AIP Available online 1983)
卷期:
Volume 42,
issue 8
页码: 678-679
ISSN:0003-6951
年代: 1983
DOI:10.1063/1.94069
出版商: AIP
数据来源: AIP
摘要:
Amorphous silicon films have been prepared through mercury‐photosensitized decomposition of monosilane gas at low temperatures. The films show optical and electrical properties comparable with those of the best films prepared by plasma chemical vapor deposition. The feasibility of amorphous solar cells with short‐circuit current densities of more than 10 mA/cm2has been demonstrated by fabrication of a Schottky barrier structure.
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