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Minority‐Carrier Sweepout in 0.09‐eV HgCdTe

 

作者: S. P. Emmons,   K. L. Ashley,  

 

期刊: Applied Physics Letters  （AIP Available online 1972）
卷期: Volume 20, issue 4  

页码: 162-163

 

ISSN:0003-6951

 

年代: 1972

 

DOI:10.1063/1.1654092

 

出版商: AIP

 

数据来源: AIP

 

摘要:

High‐field measurements of decreased response time, gain saturation, and enhanced signal‐to‐noise ratio are reported as evidence of minority‐carrier sweepout in 0.09‐eV HgCdTe photoconductors.

 

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