With the lowering of the implantation energies it becomes more and more a problem to perform a correct quantification of the implanted species, especially if a major part of the implant is deposited in a screening or native oxide. Usually the Secondary Ion Mass Spectrometry (SIMS) is applied for the analysis of those implants. The problem using SIMS is the strong sensitivity for changes in the composition of the matrix. This matrix effect causes a dramatic change of the Relative Sensitivity Factor (RSF) dependent on the oxidation state of the sample. In this paper a correction procedure for the changing oxidation state is proposed. ©2001 American Institute of Physics.