Taper etching of the thermal oxide layer
作者:
Y.I.Choi,
C.K.Kim,
Y.S.Kwon,
期刊:
IEE Proceedings I (Solid-State and Electron Devices)
(IET Available online 1986)
卷期:
Volume 133,
issue 1
页码: 13-17
年代: 1986
DOI:10.1049/ip-i-1.1986.0003
出版商: IEE
数据来源: IET
摘要:
Controllable taper windows in thermally grown silicon dioxide layers are produced by depositing a thin layer of silicafilm on the thermal oxide layer before chemical etching. As the densification temperature of silicafilm is varied from 175°C to 1150°C, taper angles from 3° to 40° are obtained. Fermat' s principle of least time is employed to derive the expression for the etched profiles of the oxide layer.
点击下载:
PDF
(632KB)
返 回