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Simplified fabrication of GaAs homojunction solar cells with increased conversion efficiencies

 

作者: John C. C. Fan,   Carl O. Bozler,   Ralph L. Chapman,  

 

期刊: Applied Physics Letters  （AIP Available online 1978）
卷期: Volume 32, issue 6  

页码: 390-392

 

ISSN:0003-6951

 

年代: 1978

 

DOI:10.1063/1.90065

 

出版商: AIP

 

数据来源: AIP

 

摘要:

Conversion efficiencies as high as 20% of AM1 have been obtained for single‐crystal GaAs shallow‐homojunction solar cells without Ga1−xAlxAs layers. These cells, which are fabricated by a simplified technique that does not require any vacuum processing steps, utilize ann+/p/p+structure with an antireflection coating prepared by anodic oxidation of then+layer.

 

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