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STIMULATED EMISSION IN In1 ‐xGaxP

 

作者: R. D. Burnham,   N. Holonyak,   D. L. Keune,   D. R. Scifres,   P. D. Dapkus,  

 

期刊: Applied Physics Letters  （AIP Available online 1970）
卷期: Volume 17, issue 10  

页码: 430-432

 

ISSN:0003-6951

 

年代: 1970

 

DOI:10.1063/1.1653258

 

出版商: AIP

 

数据来源: AIP

 

摘要:

By a modified Bridgman solution‐growth technique employing a small temperature gradient. InP and GaP source crystal are used to saturate an In solution at ∼ 925°C and grow In1−xGaxP (x∼ 0.3) at ∼ 925°C. This material is shown to exhibit stimulated emission.

 

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