On the origin of periodic surface structure of laser‐annealed semiconductors
作者:
G. N. Maracas,
G. L. Harris,
C. A. Lee,
R. A. McFarlane,
期刊:
Applied Physics Letters
(AIP Available online 1978)
卷期:
Volume 33,
issue 5
页码: 453-455
ISSN:0003-6951
年代: 1978
DOI:10.1063/1.90376
出版商: AIP
数据来源: AIP
摘要:
Observations on laser‐irradiated GaAs are reported in which the phenomenon of induced surface periodicity is related to a nonlinear interaction between simultaneously oscillating axial modes of the laser. It is suggested that during surface melting and regrowth material is distributed along nodal lines of a standing acoustic wave pattern corresponding to the axial mode beat frequencies. The several patterns observed are not consistent with an interference effect at optical frequencies.
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