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On the origin of periodic surface structure of laser‐annealed semiconductors

 

作者: G. N. Maracas,   G. L. Harris,   C. A. Lee,   R. A. McFarlane,  

 

期刊: Applied Physics Letters  (AIP Available online 1978)
卷期: Volume 33, issue 5  

页码: 453-455

 

ISSN:0003-6951

 

年代: 1978

 

DOI:10.1063/1.90376

 

出版商: AIP

 

数据来源: AIP

 

摘要:

Observations on laser‐irradiated GaAs are reported in which the phenomenon of induced surface periodicity is related to a nonlinear interaction between simultaneously oscillating axial modes of the laser. It is suggested that during surface melting and regrowth material is distributed along nodal lines of a standing acoustic wave pattern corresponding to the axial mode beat frequencies. The several patterns observed are not consistent with an interference effect at optical frequencies.

 

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