The use of a laser as a tool for annealing of ion‐implantation damage is described. The principal results obtained are as follows: (1) electrical measurements show that activity comparable to that of a 1000 °C 30‐min anneal can be obtained; (2) TEM measurements show that complete recrystallization of the damaged layer occurs during the laser anneal; (3) impurity profiles obtained from SIMS measurments show that the dopant atoms remain in the LSS profile during annealing. Simple diodes were fabricated to examine the feasibility of the method for device fabrication.