Room‐temperature cw laser operation well into the visible spectrum (&lgr; ∼ 6000 Å) is reported for In1−xGaxP (x≤ 0.60). Thin (1–5‐&mgr;) experimental samples are compressed into In, under a thick (∼ 250‐&mgr;) high‐index (&eegr; > 2. 6) SiC window, with a thin (10–50‐&mgr;) narrow SiC platelet under part of the In1−xGaxP sample. The thin In1−xGaxP samples, in the compound cavity, are volume excited in a small spot with an argon laser so that the heat is easily removed by the SiC windows and nearby In heat sink.