Ion implantation into insulators: charge‐removal studies using ion‐induced characteristic x rays
作者:
Wendland Beezhold,
E.P. EerNisse,
期刊:
Applied Physics Letters
(AIP Available online 1972)
卷期:
Volume 21,
issue 12
页码: 592-595
ISSN:0003-6951
年代: 1972
DOI:10.1063/1.1654268
出版商: AIP
数据来源: AIP
摘要:
The effectiveness of a number of charge‐removal techniques during ion implantation into insulators has been examined by monitoring the ion‐induced characteristic x‐ray emission of target atoms during proton implantation. Successful removal of charge buildup occurs for samples which are coated with a thin conducting surface layer and for samples which have intimate contact between the implanted region and a conducting mask and are flooded with a defocused ion beam.
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