A SiC high temperature amplifier circuit has been developed using discrete SiC depletion mode transistors. The amplifier open loop gain decreases by only 4 dB over the temperature range of 298 to 573 K at 1 kHz. From radiation effects results on the discrete devices included in this paper it is expected that this amplifier could survive a severe radiation environment to a total dose of 100 Mrad and neutron fluence exceeding 1015n/cm2. The radiation results also suggest that the amplifier will be less susceptible to radiation at high temperatures. ©1995 American Institute of Physics