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Channeling of Phosphorous Ions in Silicon

 

作者: V. G. K. Reddi,   J. D. Sansbury,  

 

期刊: Applied Physics Letters  （AIP Available online 1972）
卷期: Volume 20, issue 1  

页码: 30-31

 

ISSN:0003-6951

 

年代: 1972

 

DOI:10.1063/1.1653967

 

出版商: AIP

 

数据来源: AIP

 

摘要:

Profiles of channeled31P ions over the energy range 30–600 keV have been measured in ⟨100⟩, ⟨111⟩, and ⟨110⟩ Si. The maximum rangeRmaxof the channeled ions is nearly the same for the ⟨100⟩ and ⟨111⟩ directions and is significantly greater for the ⟨110⟩ direction.

 

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