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Spatial dependence of the carrier lifetime in thin films of silicon on sapphire

 

作者: Ditmar Kranzer,  

 

期刊: Applied Physics Letters  （AIP Available online 1974）
卷期: Volume 25, issue 2  

页码: 103-105

 

ISSN:0003-6951

 

年代: 1974

 

DOI:10.1063/1.1655396

 

出版商: AIP

 

数据来源: AIP

 

摘要:

An experimental technique is described for determination of the generation carrier lifetime as a function of the distance of the insulator‐semiconductor interface. This method is applied to thin films of silicon on sapphire nominally 1 &mgr; thick and dopedntype.

 

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