The effect of electronic bombardment on metal‐polymer‐silicon structures is considered. The polymer film was obtained by polymerization of monomer vapor (styrene) in an ac glow discharge. The relative dielectric constant of the films is 3 and the dissipation factor is 0.01. Under 25‐keV electronic bombardment at various flux levels and with different polarizing voltages applied, the shifts of theC(V) curve are always in the opposite direction to that induced by the polarizing voltage. The displacement under irradiation is lower than observed with the metal‐silicon dioxide‐silicon structure. It is remarkable that the radiation effects are not permanent. The structures do not have any memory of irradiation constraints.