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A kinetics scheme for the XeF laser

 

作者: T. G. Finn,   L. J. Palumbo,   L. F. Champagne,  

 

期刊: Applied Physics Letters  (AIP Available online 1978)
卷期: Volume 33, issue 2  

页码: 148-151

 

ISSN:0003-6951

 

年代: 1978

 

DOI:10.1063/1.90287

 

出版商: AIP

 

数据来源: AIP

 

摘要:

A kinetics scheme is described for electron‐beam excitation of the XeF laser in a neon diluent. Both Ne+and Ne* channels contribute significantly to the formation of the upper laser level. In each chain an important Penning ionization process leads to the formation of Xe+, which is the major intermediary in forming the upper laser level. Xe+2is found to be the dominant absorber of laser radiation. The effect of the weakly bound XeF ground state is discussed.

 

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