A kinetics scheme for the XeF laser
作者:
T. G. Finn,
L. J. Palumbo,
L. F. Champagne,
期刊:
Applied Physics Letters
(AIP Available online 1978)
卷期:
Volume 33,
issue 2
页码: 148-151
ISSN:0003-6951
年代: 1978
DOI:10.1063/1.90287
出版商: AIP
数据来源: AIP
摘要:
A kinetics scheme is described for electron‐beam excitation of the XeF laser in a neon diluent. Both Ne+and Ne* channels contribute significantly to the formation of the upper laser level. In each chain an important Penning ionization process leads to the formation of Xe+, which is the major intermediary in forming the upper laser level. Xe+2is found to be the dominant absorber of laser radiation. The effect of the weakly bound XeF ground state is discussed.
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