Determination of deep‐level energy and density profiles in inhomogeneous semiconductors
作者:
G. Goto,
S. Yanagisawa,
O. Wada,
H. Takanashi,
期刊:
Applied Physics Letters
(AIP Available online 1973)
卷期:
Volume 23,
issue 3
页码: 150-151
ISSN:0003-6951
年代: 1973
DOI:10.1063/1.1654839
出版商: AIP
数据来源: AIP
摘要:
A method is proposed for the determination of deep impurity levels and density profiles fromC&sngbnd;Vmeasurements and is demonstrated on GaAs Schottky barrier diodes. The technique involves measurements of the time dependence of the bias voltage instead of the barrier capacitance. The spatial distribution of a deep level is observed to exhibit a peak at the boundary between an epitaxial layer and the semi‐insulating substrate. This deep center is located 0.8 eV below the conduction band.
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