Reduction in the localized band‐gap states in amorphous silicon by annealing and hydrogen implantation
作者:
G. W. Neudeck,
T. C. Lee,
期刊:
Applied Physics Letters
(AIP Available online 1983)
卷期:
Volume 43,
issue 7
页码: 680-682
ISSN:0003-6951
年代: 1983
DOI:10.1063/1.94444
出版商: AIP
数据来源: AIP
摘要:
The effect ofinsituthermal annealing prior to hydrogen implantation is reported on vacuum evaporated amorphous silicon. By performing a 400 °C anneal for 4 h immediately following film deposition the film porosity is greatly reduced. The film is then implanted with hydrogen to a dose of 5×1016/cm2. A field‐effect conductance change of six orders of magnitude was observed which yielded a density of localized states near the Fermi level of 4×1017/cm3eV.
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