The drift velocity‐electric field curve for holes inp‐GaAs has been experimentally determined at 300 °K on <111> oriented samples. The velocity becomes a sublinear function of field aroundE=1.5×104V/cm, but no saturation was observed up to the highest fields reached (Emax=6×104V/cm,vmax=7.8×106cm/sec). This result is in disagreement with the recent predictions of Kim based on analysis of GaAs avalanche diode oscillators.