首页   按字顺浏览 期刊浏览 卷期浏览 Epitaxial Aluminum Nitride Film on Silicon(111) Grown by Reactive DC Magnetron Sputter ...
Epitaxial Aluminum Nitride Film on Silicon(111) Grown by Reactive DC Magnetron Sputter Deposition

 

作者: Maria C. Militello,   Stephen W. Gaarenstroom,   Steven J. Simko,  

 

期刊: Surface Science Spectra  （AIP Available online 1992）
卷期: Volume 1, issue 1  

页码: 3-7

 

ISSN:1055-5269

 

年代: 1992

 

DOI:10.1116/1.1247668

 

出版商: American Vacuum Society

 

关键词: thin film;aluminum nitride;sputter deposited;epitaxial film;ALUMINIUM NITRIDES;THIN FILMS;EPITAXIAL LAYERS;REACTIVE SPUTTERING;AUGER ELECTRON SPECTROSCOPY;ELECTRON PROBES;TRANSMISSION ELECTRON MICROSCOPY;X-RAY DIFFRACTION

 

数据来源: AIP

 

摘要:

An Auger electron spectrum of an aluminum nitride thin film is presented. The film was prepared by reactive dc magnetron sputter deposition onto a silicon wafer substrate. The film was grown epitaxially on the Si(111) substrate. The film was also characterized using electron probe microanalysis, x-ray diffraction, and transmission electron microscopy.

 

点击下载:  PDF (386KB)



返 回