Lattice defect structure of degraded InGaAsP‐InP double‐heterostructure lasers
作者:
K. Ishida,
T. Kamejima,
Y. Matsumoto,
K. Endo,
期刊:
Applied Physics Letters
(AIP Available online 1982)
卷期:
Volume 40,
issue 1
页码: 16-17
ISSN:0003-6951
年代: 1982
DOI:10.1063/1.92917
出版商: AIP
数据来源: AIP
摘要:
Lattice defect structure of degraded InGaAsP lasers has been investigated by scanning and transmission electron microscopy. It is found that although dislocation climb motion in InGaAsP lasers is slow, slip dislocations parallel to the stripe cause rapid degradation of the lasers.
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