首页   按字顺浏览 期刊浏览 卷期浏览 DETERMINATION OF INTERNAL ELECTRIC FIELDS IN SILICON DIOXIDE LAYERS BY OPTICAL PROBING
DETERMINATION OF INTERNAL ELECTRIC FIELDS IN SILICON DIOXIDE LAYERS BY OPTICAL PROBING

 

作者: H. A. Protschka,   F. Frankovsky,  

 

期刊: Applied Physics Letters  （AIP Available online 1969）
卷期: Volume 14, issue 10  

页码: 304-305

 

ISSN:0003-6951

 

年代: 1969

 

DOI:10.1063/1.1652660

 

出版商: AIP

 

数据来源: AIP

 

摘要:

Existing nominal electric fields in unirradiated and electron‐bombarded silicon dioxide layers of SOS‐sandwich structures were determined by means of optical probing. The method of investigation is based on the quadratic electro‐optical Kerr effect and employs a suitable optical arrangement in connection with a 0.6328‐&mgr; helium‐neon laser.

 

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