Investigation of Thermoelectric Power of Ga2Se3Monocrystals
作者:
G. A. Gamal,
H. A. Elshaikh,
期刊:
Crystal Research and Technology
(WILEY Available online 1995)
卷期:
Volume 30,
issue 6
页码: 867-872
ISSN:0232-1300
年代: 1995
DOI:10.1002/crat.2170300626
出版商: WILEY‐VCH Verlag
数据来源: WILEY
摘要:
AbstractSingle crystals of Ga2Se3were prepared by a technique based on the Bridgman method. Thermoelectric power was investigated in the temperature range 160–525 K. From this investigation many physical parameters such as effective masses of charge carriers, carrier mobilities, diffusion length, diffusion coefficient, and the relaxation time for both majority and minority carriers were estimated. In conjunction with the electrical conductivity and the charge carrier concentration, the thermoelectric power is discusse
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