A new type of high‐low‐junction emitter silicon solar cell employing an oxide‐charge‐induced electron accumulation layer demonstrates complete suppression of the dark emitter recombination currentJEto values so low that the base recombination current dominates in determining the open‐circuit voltageVOC. This suppression ofJEresults in measured values ofVOCconsiderably larger than those previously reported forn‐on‐psilicon solar cells. This ability to suppressJEleads to projections of efficiency of about 18% AM0 and about 20% AM1 for this oxide‐charge‐induced high‐low‐junction emitter (OCI‐HLE) solar cell.