Compensation from implantation in GaAs
作者:
D. Eirug Davies,
J. K. Kennedy,
A. C. Yang,
期刊:
Applied Physics Letters
(AIP Available online 1973)
卷期:
Volume 23,
issue 11
页码: 615-616
ISSN:0003-6951
年代: 1973
DOI:10.1063/1.1654767
出版商: AIP
数据来源: AIP
摘要:
Non‐dopant ions have been implanted at low doses ([inverted lazy s] 1010cm−2) into GaAs to determine the extent of carrier removal and to pin‐point annealing stages for carrier recovery. A removal rate of around 200 carriers per ion is found for such lighter ions as B+, N+, and F+. At the 1‐MeV energy used, compensating damage extends along the ion track right from the GaAs wafer surface. Partial recovery of the carriers as well as mobility occurs at the well‐known 225 °C electron damage annealing stage. A further annealing stage is found at [inverted lazy s] 525 °C.
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