Behavior of Phosphorous and Arsenic Diffused Simultaneously into Silicon Crystals
作者:
F. Fujimoto,
K. Komaki,
M. Watanabe,
T. Yonezawa,
期刊:
Applied Physics Letters
(AIP Available online 1972)
卷期:
Volume 20,
issue 7
页码: 248-249
ISSN:0003-6951
年代: 1972
DOI:10.1063/1.1654132
出版商: AIP
数据来源: AIP
摘要:
Behavior of phosphorus and arsenic atoms diffused simultaneously into silicon crystals, in which the density of phosphorus at the surface is 1021cm−3, was studied by random and aligned spectra of backscattered helium ions and radioactive analysis techniques. It was concluded that the phosphorus atoms enter substitutionally and arsenic atoms interstitially, indicating that interstitial atoms inhibit the generation of dislocations.
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