The influence of ion beam annealing on the accumulation of direct impact induced amorphisation
作者:
G. Carter,
期刊:
Radiation Effects
(Taylor Available online 1987)
卷期:
Volume 100,
issue 3-4
页码: 281-288
ISSN:0033-7579
年代: 1987
DOI:10.1080/00337578708213253
出版商: Taylor & Francis Group
数据来源: Taylor
摘要:
Recent studies have indicated that ion beam annealing of amorphous crystalline interfaces occurs by an ion-beam-triggered but thermally-activated process near the interface. This observation is used to develop a simple model for the accumulation of amorphousness under direct impact amorphisation conditions with competing ion-beam-triggered and additional thermally-activated annealing processes relevant to heavy-ion implantation of semiconductors. The effects of variations of ion flux density, ion fluence and substrate temperature are explored.
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