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Intensity modulation in GaAlAs metal‐gap channel waveguides

 

作者: A. R. Reisinger,   D. W. Bellavance,   K. L. Lawley,  

 

期刊: Applied Physics Letters  （AIP Available online 1978）
卷期: Volume 32, issue 10  

页码: 663-665

 

ISSN:0003-6951

 

年代: 1978

 

DOI:10.1063/1.89847

 

出版商: AIP

 

数据来源: AIP

 

摘要:

We report a simple intensity modulator in GaAlAs waveguiding structures. The optical attenuation associated with Schottky‐barrier contacts defining metal‐gap channels is controlled by an applied voltage. A modulation depth of 88% was measured at a wavelength of 1.06 &mgr;m with a bias of 25 V in a device 8.5 mm long.

 

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