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Argon bubble formation in the sputtering of PtSi

 

作者: Z. L. Liau,   T. T. Sheng,  

 

期刊: Applied Physics Letters  （AIP Available online 1978）
卷期: Volume 32, issue 11  

页码: 716-718

 

ISSN:0003-6951

 

年代: 1978

 

DOI:10.1063/1.89896

 

出版商: AIP

 

数据来源: AIP

 

摘要:

Argon bubble formation has been observed by Rutherford backscattering spectrometry and cross‐sectional transmission electron microscopy in PtSi sputtered by Ar ions of 20–160 keV. The backscattering data show the bubble formation process to be repetitive. This phenomenon is interpreted in terms of Ar release due to the sputter etching.

 

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