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Optical waveguides in single layers of Ga1−xAlxAs grown on GaAs substrates

 

作者: E. Garmire,  

 

期刊: Applied Physics Letters  （AIP Available online 1973）
卷期: Volume 23, issue 7  

页码: 403-404

 

ISSN:0003-6951

 

年代: 1973

 

DOI:10.1063/1.1654935

 

出版商: AIP

 

数据来源: AIP

 

摘要:

Efficient low‐loss optical waveguides have been made with the growth of only a single epilayer of Ga1−xAlxon GaAs substrates. The AlAs concentration gradient which is grown by liquid‐phase epitaxy using thin gallium melts is the cause of the guiding.

 

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