Additive coloration of sapphire
作者:
K. H. Lee,
J. H. Crawford,
期刊:
Applied Physics Letters
(AIP Available online 1978)
卷期:
Volume 33,
issue 4
页码: 273-275
ISSN:0003-6951
年代: 1978
DOI:10.1063/1.90362
出版商: AIP
数据来源: AIP
摘要:
F‐type centers have been introduced in to single crystals of &agr;‐Al2O3by heating them at 2000 °C in a graphite crucible under strongly reducing conditions. This treatment produces results similar to additive coloration in that anion vacancies charge compensated by electrons are introduced as demonstrated by the presence of a 6.1‐eV optical absorption band after heating. Although the same band can be created by high‐energy‐particle bombardment; by contrast those resulting from this additive coloration procedure are very stable against thermal annealing. Annealing above 1400 °C in air is necessary to produce a decrease in the 6.1‐eV‐band amplitude. The 6.1‐eV band has been related to theFcenter in our previous study. This study further substantiates this model.
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