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Carrier lifetimes in epitaxial InAs

 

作者: V. L. Dalal,   W. A. Hicinbothem,   H. Kressel,  

 

期刊: Applied Physics Letters  （AIP Available online 1974）
卷期: Volume 24, issue 4  

页码: 184-185

 

ISSN:0003-6951

 

年代: 1974

 

DOI:10.1063/1.1655145

 

出版商: AIP

 

数据来源: AIP

 

摘要:

A comparison has been made of the minority‐carrier lifetime (77–300 K) in relatively pure InAs prepared by liquid phase epitaxy, vapor phase epitaxy, and from the melt. The data suggest that the lifetime is controlled by Auger recombination in the material prepared by liquid phase epitaxy. This is not the case for the other materials.

 

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