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Optical recording in hydrogenated semiconductors

 

作者: M. A. Bo¨sch,  

 

期刊: Applied Physics Letters  (AIP Available online 1982)
卷期: Volume 40, issue 1  

页码: 8-10

 

ISSN:0003-6951

 

年代: 1982

 

DOI:10.1063/1.92900

 

出版商: AIP

 

数据来源: AIP

 

摘要:

Optical information recording and storage is investigated in hydrogenated amorphous semiconductor films. The recording mechanisms are based on the evolution of hydrogen within the active layer. Three different processes are observed: (1) bulge (or bubble) formation, (2) spongelike microswelling, and (3) ablation without melting.

 

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