Single crystal vanadium has been im lanted with Ga, Bi, In, Cs, Se and Kr ions in the energy range between 40 and 300 keV and doses in the range 1014B-1017ions/cm2. Implanted samples were analysed using the backscattering and channelling technique. The depth of damage was found to be considerably greater than the projected range of the implanted ions, and dependent on ion energy and dose. Only a small dependence of the amount of damage on these parameters was detected. A low damage density was observed in the range of the implanted ions for doses up to 1016ions/cm2whereas for higher doses and for Ga implants after heat treatment the formation of a polycrystalline layer in this region occurred. A break-up of this layer at temperatures of about 1000°C was accompanied by a loss of the implanted constituent. At low doses (< 1016ions/cm2) and for all ions a broad annealing stage for the radiation damage was observed between 500 and 900°C. A strong dependence of the substitutional component on the atomic radii of the implanted ion was also detected. An enhanced substitutional solubility of Ga in vanadium was achieved with the implantation technique.