Effects of doping on transport and deep trapping in hydrogenated amorphous silicon
作者:
R. A. Street,
J. Zesch,
M. J. Thompson,
期刊:
Applied Physics Letters
(AIP Available online 1983)
卷期:
Volume 43,
issue 7
页码: 672-674
ISSN:0003-6951
年代: 1983
DOI:10.1063/1.94441
出版商: AIP
数据来源: AIP
摘要:
We report a quantitative comparison of the trapping rates of carriers at charged and neutral dangling bonds in hydrogenated amorphous silicon (a‐Si:H). The data are obtained from time‐of‐flight photoconductivity studies of doped and undoped samples. The temperature dependence of the trapping rates, as well as the effect of boron doping on the hole drift mobility, is also reported.
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