Yellow‐light‐emitting ZnSe diode
作者:
Y.S. Park,
C.R. Geesner,
B.K. Shin,
期刊:
Applied Physics Letters
(AIP Available online 1972)
卷期:
Volume 21,
issue 12
页码: 567-569
ISSN:0003-6951
年代: 1972
DOI:10.1063/1.1654259
出版商: AIP
数据来源: AIP
摘要:
Yellow‐orange luminescence peaking at 5900 Å was obtained from the aluminum‐doped ZnSe diode. The external quantum efficiency of 0.1% has been attained at 300 °K. Brightness levels of 200 fL have been measured at an input power of 100 mW.
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