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Yellow‐light‐emitting ZnSe diode

 

作者: Y.S. Park,   C.R. Geesner,   B.K. Shin,  

 

期刊: Applied Physics Letters  (AIP Available online 1972)
卷期: Volume 21, issue 12  

页码: 567-569

 

ISSN:0003-6951

 

年代: 1972

 

DOI:10.1063/1.1654259

 

出版商: AIP

 

数据来源: AIP

 

摘要:

Yellow‐orange luminescence peaking at 5900 Å was obtained from the aluminum‐doped ZnSe diode. The external quantum efficiency of 0.1% has been attained at 300 °K. Brightness levels of 200 fL have been measured at an input power of 100 mW.

 

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