Extended dislocations in GaAs0.7P0.3
作者:
S. Mader,
A. E. Blakeslee,
期刊:
Applied Physics Letters
(AIP Available online 1974)
卷期:
Volume 25,
issue 7
页码: 365-367
ISSN:0003-6951
年代: 1974
DOI:10.1063/1.1655510
出版商: AIP
数据来源: AIP
摘要:
Misfit dislocations in epitaxially grown layers of GaAs1−xPxwith a lattice constant gradient were examined by weak beam TEM. They are dissociated into partial dislocations and in specimens with (113) growth planes they form networks of extended and contracted nodes on (111) planes. The dissociation corresponds to an intrinsic stacking fault energy of 43 erg/cm2for GaAs0.7P0.3.
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