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Deep‐level spectroscopy in high‐resistivity materials

 

作者: Ch. Hurtes,   M. Boulou,   A. Mitonneau,   D. Bois,  

 

期刊: Applied Physics Letters  （AIP Available online 1978）
卷期: Volume 32, issue 12  

页码: 821-823

 

ISSN:0003-6951

 

年代: 1978

 

DOI:10.1063/1.89929

 

出版商: AIP

 

数据来源: AIP

 

摘要:

A simple method to characterize deep levels in high‐resistivity materials is described. Excess carriers are optically injected by pulsed light. The detrapping of these carriers leads to a transient current collected between two contacts. The signal is analyzed as in DLTS, i.e., deep level spectra are recorded during temperature cycles. Some examples of the use of this method are given.

 

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