Epitaxial layers of GaAs have been successfully grown on corrugated GaAs substrates. Growth techniques were such that the corrugation was preserved during the growth process. Growth conditions are described which permitp‐njunctions containing corrugations of period suitable for electrically pumped distributed‐feedback lasers in GaAs to be produced. This work demonstrates that there are no fundamental limitations on growing buried corrugations in GaAs for a large variety of integrated optical devices.