Characterization of silicon layers via guided wave optics
作者:
Michel Olivier,
Jean‐Claude Peuzin,
期刊:
Applied Physics Letters
(AIP Available online 1978)
卷期:
Volume 32,
issue 6
页码: 386-388
ISSN:0003-6951
年代: 1978
DOI:10.1063/1.90063
出版商: AIP
数据来源: AIP
摘要:
The usefulness of guided wave optics as a tool for characterizing general purpose thin films is demonstrated in two cases of practical interest, i.e., silicon on sapphire and amorphous silicon on glass. Important results are as follows: (i) optical wave propagation at &lgr;=1.15 &mgr;m has been observed along a few millimeters in silicon layers; (ii) silicon on sapphire layers show a very high photoelastically induced quasiuniaxial birefringence (&Dgr;n≃0.02); (iii) amorphous silicon layers exhibit a nonrectangular index profile, a high birefringence (&Dgr;n≃0.02), and finally an anomalously low value of their mean ordinary index (n≃3.04±0.01).
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