首页   按字顺浏览 期刊浏览 卷期浏览 Selective low‐temperature mass transport in InGaAsP/InP lasers
Selective low‐temperature mass transport in InGaAsP/InP lasers

 

作者: A. Hasson,   L. C. Chiu,   T. R. Chen,   U. Koren,   Z. Rav‐Noy,   K. L. Yu,   S. Margalit,   A. Yariv,  

 

期刊: Applied Physics Letters  （AIP Available online 1983）
卷期: Volume 43, issue 5  

页码: 403-405

 

ISSN:0003-6951

 

年代: 1983

 

DOI:10.1063/1.94395

 

出版商: AIP

 

数据来源: AIP

 

摘要:

A low‐temperature mass transport process in InP was investigated. Mass transport of InP was achieved at 570–600 °C in a closed ampoule using iodine or InI as a catalytic transporting agent. Accomplishing the mass transport process at lower temperature has eliminated the problem of thermal etching and resulted in lasers with higherT0.

 

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